JPH0145747B2 - - Google Patents

Info

Publication number
JPH0145747B2
JPH0145747B2 JP56150286A JP15028681A JPH0145747B2 JP H0145747 B2 JPH0145747 B2 JP H0145747B2 JP 56150286 A JP56150286 A JP 56150286A JP 15028681 A JP15028681 A JP 15028681A JP H0145747 B2 JPH0145747 B2 JP H0145747B2
Authority
JP
Japan
Prior art keywords
schottky junction
capacitance
active layer
gaas
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56150286A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5851552A (ja
Inventor
Masahiro Nishiuma
Shutaro Nanbu
Masahiro Hagio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56150286A priority Critical patent/JPS5851552A/ja
Publication of JPS5851552A publication Critical patent/JPS5851552A/ja
Publication of JPH0145747B2 publication Critical patent/JPH0145747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56150286A 1981-09-22 1981-09-22 半導体装置 Granted JPS5851552A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150286A JPS5851552A (ja) 1981-09-22 1981-09-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150286A JPS5851552A (ja) 1981-09-22 1981-09-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS5851552A JPS5851552A (ja) 1983-03-26
JPH0145747B2 true JPH0145747B2 (en]) 1989-10-04

Family

ID=15493653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150286A Granted JPS5851552A (ja) 1981-09-22 1981-09-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS5851552A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105341A (ja) * 1982-12-09 1984-06-18 Mitsubishi Electric Corp インタデイジタルキヤパシタ
US4998147A (en) * 1989-07-31 1991-03-05 Motorola, Inc. Field effect attenuator devices having controlled electrical lengths
US6822312B2 (en) * 2000-04-07 2004-11-23 Koninklijke Philips Electronics N.V. Interdigitated multilayer capacitor structure for deep sub-micron CMOS
US6974744B1 (en) 2000-09-05 2005-12-13 Marvell International Ltd. Fringing capacitor structure
US6980414B1 (en) 2004-06-16 2005-12-27 Marvell International, Ltd. Capacitor structure in a semiconductor device
JP2012004255A (ja) * 2010-06-15 2012-01-05 Panasonic Corp 半導体装置

Also Published As

Publication number Publication date
JPS5851552A (ja) 1983-03-26

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